This tender with title ОКР «Разработка установки МОС-гидридной эпитаксии (МОГФЭ) для получения гетероструктур на основе GaN для СВЧ-транзисторов и МИС, светодиодов и перспективных приборов радиофотоники с групповой обработкой подложек 5×Ø100мм и 3×Ø150мм», шифр«Поток» -- ROC "Development of a MOS-hydride epitaxy (MOVPE) installation for producing GaN-based heterostructures for microwave transistors and MICs, light-emitting diodes and advanced radio-photonics devices with batch processing of 5 × Ø100mm and 3 × Ø150mm substrates", code "Potok" has been published on Bidding Source portal dated 29 Sep 2021 for the country of Russia. It has been categorized on Transistors & Microwave equipment & Installation services of radio equipment & Batch processing services & Light-emitting diodes & Structures and parts of structures & Diodes. For similar tenders you can see tenders mentioned below of this page.
ROC "Development of a MOS-hydride epitaxy (MOVPE) installation for producing GaN-based heterostructures for microwave transistors and MICs, light-emitting diodes and advanced radio-photonics devices with batch processing of 5 × Ø100mm and 3 × Ø150mm substrates", code "Potok"
General Information
ROC "Development of a MOS-hydride epitaxy (MOVPE) installation for producing GaN-based heterostructures for microwave transistors and MICs, light-emitting diodes and advanced radio-photonics devices with batch processing of 5 × Ø100mm and 3 × Ø150mm substrates", code "Potok"
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