This tender with title ОКР «Разработка установки молекулярно-лучевой эпитаксии (МЛЭ) для выращивания соединений А3B5 на монокристаллических подложках диаметром до 150 мм для получения гетероструктур СВЧ-микроэлектроники, фотоприёмной техники и радиофотоники на основе InAlGaAs (в вариантном исполнении – n+GaN и тонких эпитаксиальных слоёв AlGaN)», шифр «Авангард» -- ROC "Development of a molecular beam epitaxy (MBE) installation for growing A3B5 compounds on single-crystal substrates with a diameter of up to 150 mm to obtain heterostructures of microwave microelectronics, photodetector technology and radio-photonics based on InAlGaAs (in a variant version - n + GaN and thin epitaxial AlGaN layers) ", Code" Avangard " has been published on Bidding Source portal dated 29 Sep 2021 for the country of Russia. It has been categorized on Microelectronic machinery and apparatus & Structures and parts of structures & Microwave equipment. For similar tenders you can see tenders mentioned below of this page.
ROC "Development of a molecular beam epitaxy (MBE) installation for growing A3B5 compounds on single-crystal substrates with a diameter of up to 150 mm to obtain heterostructures of microwave microelectronics, photodetector technology and radio-photonics based on InAlGaAs (in a variant version - n + GaN and thin epitaxial AlGaN layers) ", Code" Avangard "
General Information
ROC "Development of a molecular beam epitaxy (MBE) installation for growing A3B5 compounds on single-crystal substrates with a diameter of up to 150 mm to obtain heterostructures of microwave microelectronics, photodetector technology and radio-photonics based on InAlGaAs (in a variant version - n + GaN and thin epitaxial AlGaN layers) ", Code" Avangard "
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